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You could modify the outlined parameters, and Review it by using a "very good" outcome which requires two hours siumlation time. Based on your conditions, you may accelerate the simulation time.
So can someone be sure to reveal how FET with minimal threshold voltage has greater velocity and higher leakage present-day even though FET with higher threshold will probably be gradual but minimal on power?
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That means I really need to simulate the circuit a lot of instances for getting the outcomes but The problem is that every simulation takes about two hours and just would make the work really sluggish.
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i had exact same issue with PICs , cek tat the sample data files operate in usual pace, i cudnt correct the challenge fully, consider eliminating the crystal and putting mcu speed at 1Mhz in its Attributes
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yes considering that in LVT threshhold voltage is low turning on from off placement will be quickly, but How about turning from the gadget from on situation? since threshhold voltage is minimal (0.2V) Should the applied gate voltage is 1V it will need to drop atleast 0.8V to turn from the LVT transistor.
The challenge is for my investigate I should do such things as sweep voltage, frequency, load resistance and so forth. to analyse their effect on the output
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